| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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519 pcs
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519 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIR606DP-T1-GE3 is an N-Channel power MOSFET from Vishay designed for efficient power switching. It offers a maximum drain-to-source voltage of 100V and can handle up to 37A of continuous drain current. The device features a low maximum on-resistance of 16.2mOhm at 15A and 10V gate drive, which minimizes conduction losses. Gate charge is 22nC at 6V, enabling fast switching. Input capacitance is 1360pF at 50V drain bias. The threshold voltage is 3.6V maximum at 250µA. Maximum power dissipation is 44.5W. The operating junction temperature range is -55°C to 150°C. The MOSFET comes in a PowerPAK SO-8 package for surface mount assembly, providing compact and efficient thermal management. It is compatible with standard SMT processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
PowerPAK SO-8 surface mount package.
-55°C to 150°C (junction).
16.2 mOhm.
22 nC at 6V gate voltage.
44.5W at case temperature Tc.