SIR580DP-T1-RE3 The Vishay Dale SIR580DP-T1-RE3 is an N-Channel MOSFET with 80V drain-source voltage and a continuous drain current of 146A (Tc). It features a low Rds On of 2.7 mOhm at 10V Vgs.
Mfr Part #:

SIR580DP-T1-RE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR580DP-T1-RE3 is an N-Channel MOSFET with 80V drain-source voltage and a continuous drain current of 146A (Tc). It features a low Rds On of 2.7 mOhm at 10V Vgs.
✓ Total Stock: 20,256 pcs
$ Price Range: $0.99

SIR580DP-T1-RE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,236 pcs
1236 pcs On Request 1 On Request On Request On Request On Request On Request

SIR580DP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR580DP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR580DP-T1-RE3 is an N-Channel MOSFET designed for various power applications. It offers a drain-source voltage (Vds) of 80V and a high continuous drain current capability of up to 146A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 2.7 mOhm at 20A and 10V Vgs, and a gate charge (Qg) of 76 nC maximum at 10V Vgs. The MOSFET operates within a temperature range of -55°C to 150°C.

 

This device is housed in a surface-mount PowerPAK SO-8 package, suitable for applications requiring efficient power management. Its features include TrenchFET Gen V technology, low RDS x Qg figure-of-merit, and 100% Rg and UIS tested.

 

Applications include synchronous rectification, DC/DC converters, power supplies, motor drive control, and battery management.

SIR580DP-T1-RE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SiR580DP N-Channel 80V MOSFET
Subcategory: N-Channel

SIR580DP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR580DP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR580DP-T1-RE3 Features

  • N-Channel 80V (D-S) MOSFET.
  • Low RDS x Qg figure-of-merit.
  • Continuous drain current up to 146A (Tc).
  • Low Rds On of 2.7 mOhm at 10V Vgs.
  • Surface mount PowerPAK SO-8 package.

SIR580DP-T1-RE3 Applications

  • Used for synchronous rectification.
  • Suitable for DC/DC converters.
  • Applied in power supplies.
  • Used in motor drive control.
  • Applicable for battery management.

SIR580DP-T1-RE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the SIR580DP-T1-RE3?

The drain-source voltage (Vds) is 80V.

What is the maximum continuous drain current for the SIR580DP-T1-RE3?

The maximum continuous drain current is 146A at 25°C case temperature and 35.8A at 25°C ambient temperature.

What is the Rds On for the SIR580DP-T1-RE3?

The Rds On is a maximum of 2.7 mOhm at 20A drain current and 10V gate-source voltage.

What is the package type for the SIR580DP-T1-RE3?

The package type is PowerPAK SO-8, designed for surface mounting.

What is the operating temperature range of the SIR580DP-T1-RE3?

The operating junction and storage temperature range is -55°C to 150°C.

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