| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
81,000 pcs
|
81000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The Vishay Dale SIR570DP-T1-RE3 is an N-Channel Power MOSFET with a drain-source voltage rating of 150V. It is designed with TrenchFET Gen V technology, offering a very low RDS x Qg figure-of-merit.
Key electrical characteristics include a maximum Rds On of 7.9 mOhm at 20A and 10V Vgs. The continuous drain current is rated at 77.4A at 25°C case temperature and 19A at 25°C ambient temperature. The gate charge (Qg) is typically 35.1 nC at 10V Vgs.
This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). Applications include DC/DC converters, power supplies, synchronous rectification, primary side switching, and motor drive control.
The device is 100% Rg and UIS tested. It is RoHS3 compliant, has an MSL rating of 1, and is REACH unaffected, though these compliance statuses are not verified by official documentation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150 V.
PowerPAK SO-8.
-55°C to +150°C.
77.4 A.
35.1 nC at Vgs = 10 V.
7.9 mOhm.