SIR494DP-T1-GE3 The Vishay Dale SIR494DP-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage and 60A continuous current rating. It features a low Rds On of 1.2mOhm at 20A, 10V and is housed in a PowerPAK SO-8 surface mount package.
Mfr Part #:

SIR494DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR494DP-T1-GE3 is an N-Channel MOSFET with a 12V drain-source voltage and 60A continuous current rating. It features a low Rds On of 1.2mOhm at 20A, 10V and is housed in a PowerPAK SO-8 surface mount package.
✓ Total Stock: 2,710 pcs
$ Price Range: $0.99

SIR494DP-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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SIR494DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR494DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiR494DP is an N-Channel Power MOSFET designed for DC/DC and OR-ing applications. It operates with a drain-source voltage (Vds) of 12V and can handle a continuous drain current (Id) of up to 60A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance (Rds On) of 1.2mOhm at 20A and 10V gate-source voltage, and 1.7mOhm at 20A and 4.5V gate-source voltage, minimizing conduction losses. Key electrical parameters include a gate charge (Qg) of 150nC at 10V and an input capacitance (Ciss) of 6900pF at 6V.

 

Packaged in a PowerPAK SO-8 surface mount configuration, the SiR494DP offers efficient thermal performance with a junction-to-case thermal resistance of 1.2°C/W. It operates across a wide temperature range of -55°C to 150°C.

 

This device is compliant with RoHS Directive 2002/95/EC, is lead (Pb)-free and halogen-free according to IEC 61249-2-21 definition. It is also rated for Moisture Sensitivity Level 1 (MSL 1).

SIR494DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay Siliconix SiR494DP N-Channel 12V Power MOSFET
Subcategory: N-Channel

SIR494DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIR494DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR494DP-T1-GE3 Features

  • 12V drain-source voltage rating.
  • 60A continuous drain current.
  • Low 1.2mOhm Rds On.
  • PowerPAK SO-8 surface mount package.
  • Halogen-free and lead-free.

SIR494DP-T1-GE3 Applications

  • Suitable for DC/DC converters.
  • Ideal for OR-ing applications.
  • Power management solutions.

SIR494DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIR494DP-T1-GE3?

The drain-source voltage (Vds) is 12V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current (Id) is 60A at 25°C case temperature.

What is the Rds On of the SIR494DP-T1-GE3 at 20A and 10V?

The Rds On is a maximum of 1.2mOhm at 20A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SIR494DP-T1-GE3 in?

It is in a PowerPAK SO-8 package for surface mounting.

Is this MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SIR494DP-T1-GE3 halogen-free?

Yes, it is halogen-free according to IEC 61249-2-21 definition.

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