| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12 pcs
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12 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SiR484DP is an N-Channel Power MOSFET designed for high-side synchronous rectifier operation. It offers a 20V drain-source breakdown voltage and a continuous drain current of up to 20A.
Key electrical characteristics include a low on-resistance of 8.3mOhm at VGS = 10V and ID = 17.2A, and 11.5mOhm at VGS = 4.5V and ID = 20A. The gate threshold voltage is a maximum of 2.5V at 250µA. Gate charge is typically 7.1nC at 10V.
This MOSFET is built using TrenchFET® technology and comes in a low-profile PowerPAK SO-8 package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ).
Applications include notebook CPU core high-side switching and POL converters. The device is tested 100% for R_g and UIS.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V minimum.
PowerPAK SO-8 surface-mount package.
-55°C to 150°C junction temperature.
8.3mOhm at VGS=10V, ID=17.2A.
7.1nC at VGS=10V.
20A.
24mJ single pulse avalanche energy.