SIR476DP-T1-GE3 The Vishay Dale SIR476DP-T1-GE3 is an N-Channel MOSFET designed for high current applications. It features a 25V drain-source voltage and a low on-resistance.
Mfr Part #:

SIR476DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR476DP-T1-GE3 is an N-Channel MOSFET designed for high current applications. It features a 25V drain-source voltage and a low on-resistance.
✓ Total Stock: 100,000 pcs
$ Price Range: $0.99

SIR476DP-T1-GE3 Available from 1 distributor

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SIR476DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR476DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR476DP-T1-GE3 is an N-Channel MOSFET belonging to the TrenchFET Gen III Power MOSFET family. It is designed for applications requiring high current handling capabilities, such as VRM, POL, and server power supplies, as well as high current DC/DC converters and OR-ing circuits.

 

This MOSFET offers a drain-source breakdown voltage of 25V and a maximum continuous drain current of 60A at 25°C case temperature. Its low on-resistance is 1.7 mOhm at 20A and 10V Vgs, and 2.1 mOhm at 20A and 4.5V Vgs. The gate charge is typically 42.5 nC at 10V Vgs, and input capacitance is 6150 pF at 10V Vds.

 

The device operates over a wide temperature range of -55°C to 150°C. It is housed in a PowerPAK SO-8 package, suitable for surface mounting. The maximum power dissipation is rated at 104W when the case temperature is 25°C, and 6.25W when the ambient temperature is 25°C.

 

Key features include 100% R g tested and 100% avalanche tested, making it suitable for demanding power management applications.

SIR476DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiR476DP N-Channel 25V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR476DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR476DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR476DP-T1-GE3 Features

  • N-Channel 25V Power MOSFET
  • Low on-resistance of 1.7 mOhm
  • High continuous drain current of 60A
  • PowerPAK SO-8 surface mount package
  • Wide operating temperature range

SIR476DP-T1-GE3 Applications

  • Suitable for VRM and POL applications
  • Ideal for high current DC/DC converters
  • Used in server power supplies
  • Designed for OR-ing circuits

SIR476DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SIR476DP-T1-GE3?

The drain-source breakdown voltage is 25V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 60A.

What is the on-resistance of the SIR476DP-T1-GE3 at 10V Vgs?

The on-resistance is a maximum of 1.7 mOhm at 20A and 10V Vgs.

What is the operating temperature range for this component?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIR476DP-T1-GE3 supplied in?

It is supplied in a PowerPAK SO-8 package.

Is the SIR476DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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