| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,951 pcs
|
7951 pcs | On Request | 1 | On Request | On Request | 1321+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR472DP-T1-GE3 is an N-Channel Power MOSFET featuring TrenchFET technology and a low-profile PowerPAK SO-8 package. It is optimized for high-side synchronous rectifier applications, such as notebook CPU core power. This MOSFET boasts a 30V drain-source breakdown voltage and a low on-resistance of 12mΩ at 10V Vgs. It can handle a continuous drain current of 20A at 25°C case temperature.
The device operates within a temperature range of -55°C to 150°C. The PowerPAK SO-8 package is surface-mounted and offers low thermal resistance. Key electrical characteristics include a gate charge of 23nC (max) at 10V Vgs and an input capacitance of 820pF (max) at 15V Vds. The MOSFET is designed for efficient power conversion in demanding applications.
This component is halogen-free and meets RoHS3 compliance standards. Its low profile and high performance make it suitable for compact power designs. The device is 100% R_g and UIS tested, ensuring reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 30 V at VGS = 0 V, ID = 250 µA.
The maximum continuous drain current is 20 A at case temperature 25°C, and 14 A at ambient temperature 25°C.
The maximum on-resistance is 12 mOhm at ID = 13.8 A and VGS = 10 V.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 2.5 V at ID = 250 µA.
The device is supplied in a PowerPAK SO-8 surface-mount package.
The maximum input capacitance is 820 pF at VDS = 15 V.