SIR470DP-T1-GE3 The Vishay Dale SIR470DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 60A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR470DP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR470DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage and 60A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 60,259 pcs
$ Price Range: $0.99

SIR470DP-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SIR470DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR470DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR470DP-T1-GE3 is an N-Channel MOSFET designed for secondary side synchronous rectification and power supply applications. It features a TrenchFET Gen III power MOSFET design, offering robust performance.

 

Key electrical specifications include a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 60A at 25°C case temperature. The Rds On is rated at a maximum of 0.0023 Ohms at 20A and 10V gate-source voltage. The typical gate charge (Qg) is 45.5 nC.

 

This MOSFET operates within a junction temperature range of -55°C to 150°C. It is packaged in a surface-mount PowerPAK SO-8 configuration, suitable for standard PCB assembly processes.

 

The device is 100% Rg and UIS tested, ensuring reliability for demanding applications. It is also lead (Pb)-free and halogen-free.

SIR470DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale SIR470DP-T1-GE3 N-Channel 40V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR470DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR470DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR470DP-T1-GE3 Features

  • N-Channel 40V TrenchFET Gen III MOSFET.
  • 60A continuous drain current capability.
  • Low Rds On of 2.3mOhm at 20A, 10V.
  • PowerPAK SO-8 surface mount package.
  • Lead (Pb)-free and halogen-free.

SIR470DP-T1-GE3 Applications

  • Suitable for high-current power switching applications.
  • Used in DC-DC converters and voltage regulators.
  • Ideal for motor drive and power management circuits.
  • Works in battery protection and load switch designs.

SIR470DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIR470DP-T1-GE3?

The maximum drain-to-source voltage (Vdss) is 40 V.

What package is the SIR470DP-T1-GE3 available in?

It comes in a PowerPAK SO-8 surface-mount package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the maximum continuous drain current at Tc=25°C?

The maximum continuous drain current is 60 A at Tc=25°C.

What is the typical gate charge of the SIR470DP-T1-GE3?

The typical gate charge (Qg) is 45.5 nC. The maximum gate charge at Vgs=10V is 155 nC.

What is the input capacitance at Vds=20V?

The maximum input capacitance (Ciss) is 5660 pF at Vds=20V.

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