SIR468DP-T1-GE3 The Vishay Dale SIR468DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR468DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR468DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 40A continuous drain current. It is housed in a PowerPAK SO-8 package.
✓ Total Stock: 134,503 pcs
$ Price Range: $0.99

SIR468DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,533 pcs
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
13,970 pcs
13970 pcs On Request 1 On Request On Request 14+ On Request On Request

SIR468DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR468DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiR468DP is an N-Channel MOSFET designed for low-side switching applications. It features a 30V drain-source voltage (Vds) and a high continuous drain current capability of 40A at 25°C case temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 5.7mOhm at 20A and 10V Vgs, and 7.6mOhm at 40A and 4.5V Vgs. The gate charge (Qg) is typically 13.8nC. It operates within a junction temperature range of -55°C to 150°C.

 

The device is packaged in a PowerPAK SO-8 surface-mount package, suitable for space-constrained designs. It is also specified as halogen-free and lead-free.

 

Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and an input capacitance (Ciss) of 1720pF at 15V. The maximum power dissipation is 50W at 25°C case temperature and 5W at 25°C ambient temperature.

SIR468DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiR468DP N-Channel 30V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR468DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SIR468DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR468DP-T1-GE3 Features

  • 30V drain-source voltage rating.
  • 40A continuous drain current.
  • Low 5.7mOhm Rds On.
  • PowerPAK SO-8 surface mount package.
  • Halogen-free and lead-free.

SIR468DP-T1-GE3 Applications

  • Suitable for DC-DC converter power stages.
  • Used in low-voltage motor drive circuits.
  • Ideal for load switching in portable devices.
  • Applicable in battery management systems.

SIR468DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIR468DP-T1-GE3?

The maximum drain-to-source voltage is 30V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 40A at a case temperature of 25°C.

What is the on-resistance of the SIR468DP-T1-GE3?

The maximum on-resistance is 5.7mOhm at a gate-source voltage of 10V and a drain current of 20A.

What package type does the SIR468DP-T1-GE3 use?

It uses a PowerPAK SO-8 surface-mount package.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of the SIR468DP-T1-GE3?

The maximum gate-source threshold voltage is 3V at a drain current of 250µA.

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