| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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95,158 pcs
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95158 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The SIR464DP-T1-GE3 is an N-Chanel MOSFET from Vishay Dale designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 50A at a case temperature of 25°C. The device achieves a typical on-resistance of 3.1mOhm with a 10V gate drive and 3.8mOhm with a 4.5V gate drive, minimizing conduction losses.
This MOSFET offers gate threshold voltage of 2.5V maximum and gate charge of 95nC maximum at 10V, enabling fast switching. Input capacitance is 3545pF at 15V drain-source. The device can dissipate up to 69W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.
Packaged in the industry-standard PowerPAK SO-8 surface mount package, the SIR464DP-T1-GE3 is suitable for automated assembly and space-constrained designs. It is commonly used in DC-DC converters, load switches, and power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V minimum at VGS=0V, ID=1mA.
50A at case temperature 25°C, 29.5A at ambient temperature 25°C.
3.1mOhm maximum at VGS=10V and ID=15A; 3.8mOhm maximum at VGS=4.5V and ID=50A.
PowerPAK® SO-8 surface mount package.
-55°C to 150°C.
2.5V maximum at ID=250µA.
69W at case temperature 25°C, 5.2W at ambient temperature 25°C.