SIR464DP-T1-GE3 N-Chanel MOSFET with 30V drain-source voltage, 50A continuous drain current, and low 3.1mOhm on-resistance at 10V gate drive. Surface mount PowerPAK SO-8 package.
Mfr Part #:

SIR464DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
N-Chanel MOSFET with 30V drain-source voltage, 50A continuous drain current, and low 3.1mOhm on-resistance at 10V gate drive. Surface mount PowerPAK SO-8 package.
✓ Total Stock: 95,158 pcs
$ Price Range: $0.99

SIR464DP-T1-GE3 Available from 1 distributor

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SIR464DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR464DP-T1-GE3 Description

Short technical summary and product information.

The SIR464DP-T1-GE3 is an N-Chanel MOSFET from Vishay Dale designed for high-efficiency power switching applications. It features a drain-source breakdown voltage of 30V and a maximum continuous drain current of 50A at a case temperature of 25°C. The device achieves a typical on-resistance of 3.1mOhm with a 10V gate drive and 3.8mOhm with a 4.5V gate drive, minimizing conduction losses.

 

This MOSFET offers gate threshold voltage of 2.5V maximum and gate charge of 95nC maximum at 10V, enabling fast switching. Input capacitance is 3545pF at 15V drain-source. The device can dissipate up to 69W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C.

 

Packaged in the industry-standard PowerPAK SO-8 surface mount package, the SIR464DP-T1-GE3 is suitable for automated assembly and space-constrained designs. It is commonly used in DC-DC converters, load switches, and power management circuits.

SIR464DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: MOSFET N-Channel 30V 50A PowerPAK SO-8
Subcategory: N-Channel MOSFET Single

SIR464DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR464DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR464DP-T1-GE3 Features

  • N-Chanel MOSFET with 30V drain-source breakdown voltage.
  • Maximum continuous drain current of 50A at 25°C case.
  • Low on-resistance of 3.1 mOhm at 10V gate drive.
  • Surface mount in PowerPAK SO-8 package.
  • Operating junction temperature range -55°C to 150°C.

SIR464DP-T1-GE3 Applications

  • Used in DC-DC converters and power management systems.
  • Ideal for load switching and battery protection circuits.
  • Suitable for high-efficiency power supplies.
  • Applied in motor control and general purpose switching.

SIR464DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of SIR464DP-T1-GE3?

30V minimum at VGS=0V, ID=1mA.

What is the maximum continuous drain current?

50A at case temperature 25°C, 29.5A at ambient temperature 25°C.

What is the typical on-resistance?

3.1mOhm maximum at VGS=10V and ID=15A; 3.8mOhm maximum at VGS=4.5V and ID=50A.

What package is this MOSFET available in?

PowerPAK® SO-8 surface mount package.

What is the operating junction temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

2.5V maximum at ID=250µA.

What is the maximum power dissipation?

69W at case temperature 25°C, 5.2W at ambient temperature 25°C.

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