| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,000 pcs
|
36000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIR438DP-T1-GE3 is an N-Channel MOSFET from Vishay Dale designed for high-efficiency power switching applications. It features a drain-source voltage rating of 25V and a continuous drain current of 60A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 1.8mOhm at VGS=10V and ID=20A, a gate charge of 105nC at VGS=10V, and input capacitance of 4560pF at VDS=10V. The device is halogen-free according to IEC 61249-2-21.
The MOSFET is housed in a PPAK SO-8 package, suitable for surface mount assembly. It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 83W at case temperature 25°C and 5.4W at ambient temperature 25°C.
This device is suitable for applications such as DC-DC converters, load switches, and power management in computing and industrial systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 150°C (junction).
25V.
60A at Tc=25°C.
1.8mOhm max at VGS=10V, ID=20A.
105nC at VGS=10V.
PPAK SO-8.
Yes, according to IEC 61249-2-21.