SIR436DP-T1-GE3 The Vishay Siliconix SIR436DP-T1-GE3 is an N-Channel MOSFET with a 25V drain-to-source voltage rating and 40A continuous drain current. It is housed in a PowerPAK SO-8 surface mount package.
Mfr Part #:

SIR436DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SIR436DP-T1-GE3 is an N-Channel MOSFET with a 25V drain-to-source voltage rating and 40A continuous drain current. It is housed in a PowerPAK SO-8 surface mount package.
✓ Total Stock: 45,413 pcs
$ Price Range: $0.99

SIR436DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
45,200 pcs
45200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
213 pcs
213 pcs On Request 1 On Request On Request 09+ On Request On Request

SIR436DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR436DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SIR436DP-T1-GE3 is an N-Channel MOSFET designed for low-side switching applications. It features a 25V drain-to-source voltage (Vds) and can handle a continuous drain current of 40A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 4.6 mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 20A. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. The device also offers a gate charge (Qg) of 13 nC typical at Vgs = 10V and an input capacitance (Ciss) of 1715 pF maximum at Vds = 15V.

 

This MOSFET is built using TrenchFET technology and comes in a PowerPAK SO-8 surface mount package. It operates within a junction temperature range of -55°C to 150°C. The device is rated for high power dissipation, with a maximum of 50W at 25°C case temperature and 5W at 25°C ambient temperature.

 

Applications for this MOSFET include server power management and VRM (Voltage Regulator Module) designs. It is also noted as being halogen-free.

SIR436DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Siliconix SiR436DP N-Channel 25V MOSFET
Subcategory: N-Channel

SIR436DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR436DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR436DP-T1-GE3 Features

  • N-Channel 25V Power MOSFET
  • 40A continuous drain current
  • Low Rds(on) of 4.6 mOhm at 10V Vgs
  • PowerPAK SO-8 surface mount package
  • Halogen-free construction

SIR436DP-T1-GE3 Applications

  • Ideal for low-side switching
  • Suitable for server power supplies
  • Used in VRM applications

SIR436DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of SIR436DP-T1-GE3?

25V minimum breakdown voltage at VGS=0V, ID=250µA.

What is the package type?

PowerPAK® SO-8 surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature range.

What is the maximum continuous drain current?

40A at case temperature 25°C.

What is the on-resistance?

Maximum 4.6mOhm at ID=20A, VGS=10V; typical 6.2mOhm at VGS=4.5V.

What is the gate threshold voltage?

Maximum 3V at VDS=VGS, ID=250µA.

What is the maximum gate-source voltage?

±20V maximum.

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