SIR424DP-T1-GE3 The Vishay Dale SIR424DP-T1-GE3 is an N-Channel MOSFET designed for high-efficiency power applications. It features a 20V drain-source voltage and a continuous current rating of 30A.
Mfr Part #:

SIR424DP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR424DP-T1-GE3 is an N-Channel MOSFET designed for high-efficiency power applications. It features a 20V drain-source voltage and a continuous current rating of 30A.
✓ Total Stock: 204,280 pcs
$ Price Range: $0.99

SIR424DP-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SIR424DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR424DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR424DP-T1-GE3 is a high-performance N-Channel TrenchFET® Power MOSFET. It is designed for demanding applications such as buck converters and POL (Point-of-Load) DC/DC converters.

 

Key electrical characteristics include a drain-source breakdown voltage of 20V and a low on-resistance of 5.5mOhm at 20A and 10V Vgs. The device offers a continuous drain current of 30A at 25°C case temperature and a maximum power dissipation of 41.7W (Tc).

 

This MOSFET is housed in a compact PowerPAK® SO-8 surface-mount package, suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 150°C (TJ). The component is compliant with RoHS Directive 2002/95/EC and is halogen-free.

 

Features like 100% Rg tested and 100% UIS tested ensure reliability and performance in various power management circuits.

SIR424DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiR424DP N-Channel 20V MOSFET
Subcategory: N-Channel

SIR424DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR424DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR424DP-T1-GE3 Features

  • N-Channel TrenchFET Power MOSFET.
  • 20V drain-source breakdown voltage.
  • Low on-resistance of 5.5mOhm.
  • 30A continuous drain current.
  • Compact PowerPAK SO-8 package.

SIR424DP-T1-GE3 Applications

  • Ideal for buck converters.
  • Suitable for POL DC/DC converters.
  • Used in power management circuits.

SIR424DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SIR424DP-T1-GE3?

The drain-source breakdown voltage is 20V.

What is the maximum continuous drain current for this MOSFET?

The maximum continuous drain current is 30A at 25°C case temperature.

What is the on-resistance of the SIR424DP-T1-GE3?

The on-resistance is a maximum of 5.5mOhm at 20A and 10V Vgs.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIR424DP-T1-GE3 in?

It is in a PowerPAK® SO-8 package.

Is the SIR424DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET halogen-free?

Yes, it is Halogen-free.

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