SIR422DP-T1-GE3 The Vishay Dale SiR422DP is an N-Channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a low on-resistance.
Mfr Part #:

SIR422DP-T1-GE3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SiR422DP is an N-Channel MOSFET designed for high-performance applications. It features a 40V drain-source voltage and a low on-resistance.
✓ Total Stock: 139,107 pcs
$ Price Range: $0.99

SIR422DP-T1-GE3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SIR422DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR422DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiR422DP is an N-Channel MOSFET with a 40V drain-source voltage rating. It utilizes TrenchFET technology for improved performance and efficiency.

 

Key electrical characteristics include a maximum continuous drain current of 40A (Tc) and a low on-resistance of 6.6mOhm at 20A and 10V. The gate charge is 48nC (max) at 10V, with an input capacitance of 1785pF (max) at 20V. The gate threshold voltage is 2.5V (max) at 250µA.

 

This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ). The device is compliant with RoHS Directive 2002/95/EC and is halogen-free.

 

Applications include POL (Point-of-Load) converters and synchronous rectification.

SIR422DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiR422DP N-Channel 40V TrenchFET Power MOSFET
Subcategory: N-Channel

SIR422DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR422DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR422DP-T1-GE3 Features

  • N-Channel 40V TrenchFET Power MOSFET
  • Low RdsOn: 6.6mOhm at 20A, 10V
  • High continuous drain current: 40A (Tc)
  • PowerPAK SO-8 surface mount package
  • Halogen-free and RoHS compliant

SIR422DP-T1-GE3 Applications

  • Suitable for POL converters
  • Used for synchronous rectification
  • Efficient power switching applications

SIR422DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SiR422DP?

The maximum drain-source voltage is 40V.

What is the maximum continuous drain current?

The maximum continuous drain current is 40A at TC = 25°C.

What is the Rds On (Max) at 20A and 10V?

The Rds On (Max) is 6.6mOhm at 20A and 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the SiR422DP in?

The SiR422DP is in a PowerPAK SO-8 package.

Is the SiR422DP RoHS compliant?

Yes, the SiR422DP is RoHS3 Compliant.

Is the SiR422DP halogen-free?

Yes, the SiR422DP is halogen-free.

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