| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
120,533 pcs
|
120533 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type |
The Vishay Dale SiR422DP is an N-Channel Power MOSFET featuring TrenchFET technology. It is rated for a 40V drain-source breakdown voltage and offers low on-resistance values of 0.0066 Ω at VGS = 10 V and 0.008 Ω at VGS = 4.5 V, with a continuous drain current of up to 40A.
This MOSFET is designed for applications such as POL (Point of Load) and synchronous rectification. It is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. The device is supplied in a PowerPAK SO-8 package, suitable for surface mounting.
Key electrical characteristics include a typical gate charge of 16.1 nC. Thermal performance is supported by a maximum junction-to-ambient thermal resistance of 25 °C/W and a maximum junction-to-case thermal resistance of 3.6 °C/W. The operating junction and storage temperature range is -55 °C to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40 V.
The typical on-resistance at VGS = 10 V is 0.0066 Ω.
The continuous drain current at TC = 25 °C is 40 A.
The operating junction and storage temperature range is -55 °C to 150 °C.
The SiR422DP is supplied in a PowerPAK SO-8 package.
The SiR422DP is RoHS3 Compliant.
Yes, the SiR422DP is halogen-free.