| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
165 pcs
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165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR418DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage rating. It is designed for applications requiring high current handling, offering a continuous drain current of 40A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 5mOhm at 20A and 10V gate-source voltage, and 6mOhm at 40A and 4.5V gate-source voltage. The device has a maximum gate charge of 75 nC at 10V and an input capacitance of 2410 pF at 20V.
This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The device is halogen-free and compliant with RoHS 3 directives.
Applications include DC/DC conversion and industrial systems where efficient power switching is critical. Its robust construction and specifications make it suitable for demanding power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
PowerPAK SO-8 surface mount package.
-55°C to 150°C junction temperature.
Yes, the device is halogen-free as per the datasheet.
5mOhm maximum at 20A drain current.
75nC maximum at 10V gate voltage.
45mJ maximum.