SIR416DP-T1-GE3 The Vishay SIR416DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 50A. It is housed in a surface-mount PowerPAK SO-8 package.
Mfr Part #:

SIR416DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay SIR416DP-T1-GE3 is an N-Channel MOSFET with a 40V drain-source voltage rating and a continuous drain current of 50A. It is housed in a surface-mount PowerPAK SO-8 package.
✓ Total Stock: 10,133 pcs
$ Price Range: $0.99

SIR416DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
113 pcs
113 pcs On Request 1 On Request On Request 15+ On Request On Request

SIR416DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR416DP-T1-GE3 Description

Short technical summary and product information.

The SIR416DP-T1-GE3 is an N-Channel enhancement-mode MOSFET from Vishay Dale. It is designed for high-efficiency power conversion applications. This device features a maximum drain-to-source voltage of 40V and a continuous drain current of 50A at case temperature 25°C. The on-resistance is typically 3.8mOhm at 15A and 10V gate drive, and 4.2mOhm at 15A and 4.5V gate drive. The gate charge is up to 90nC at 10V, and input capacitance is 3350pF at 20V drain-source voltage. The MOSFET is capable of handling 69W power dissipation at case temperature 25°C. The operating junction temperature range is -55°C to 150°C. The device is packaged in a PowerPAK SO-8 surface mount package, which offers excellent thermal performance. It is suitable for applications such as DC-DC converters, load switches, and motor control circuits.

SIR416DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: Sirxxxdp
Canonical Name: Vishay SIR416DP-T1-GE3 N-Channel 40V PowerPAK SO-8 MOSFET
Subcategory: N-Channel

SIR416DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR416DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR416DP-T1-GE3 Features

  • N-Channel 40V MOSFET design.
  • 50A continuous drain current rating.
  • Low on-resistance of 3.8mOhm.
  • PowerPAK SO-8 surface mount package.
  • Operation from -55°C to 150°C.

SIR416DP-T1-GE3 Applications

  • Ideal for DC-DC converter circuits.
  • Used in load switch applications.
  • Suitable for motor control systems.
  • Power management in portable devices.

SIR416DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIR416DP-T1-GE3?

The maximum drain-to-source voltage is 40V.

What is the package type of the SIR416DP-T1-GE3?

The device is packaged in a PowerPAK SO-8 surface mount package.

What is the operating temperature range of the SIR416DP-T1-GE3?

The operating junction and storage temperature range is -55°C to 150°C.

What gate drive voltage range is recommended for the SIR416DP-T1-GE3?

The recommended gate drive voltage range is 4.5V to 10V.

What is the on-resistance of the SIR416DP-T1-GE3?

The on-resistance is 3.8mOhm at 15A and 10V gate drive, and 4.2mOhm at 15A and 4.5V gate drive.

What is the maximum continuous drain current of the SIR416DP-T1-GE3?

The maximum continuous drain current is 50A at case temperature 25°C.

What is the maximum power dissipation of the SIR416DP-T1-GE3?

The maximum power dissipation is 69W at case temperature 25°C.

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