| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,805 pcs
|
2805 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR414DP-T1-GE3 is a single N-Channel power MOSFET designed for applications requiring efficient power switching. It boasts a 40V drain-source voltage and a continuous drain current of 50A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 2.8mOhm at 20A and 10V gate-source voltage, and 3.2mOhm at VGS = 4.5V. The device features a typical gate charge of 38nC and a maximum gate-source voltage of ±20V.
This MOSFET is housed in a PowerPAK SO-8 surface-mount package, suitable for compact designs. It operates within a temperature range of -55°C to 150°C (TJ). The device is also tested for 100% Rg and UIS, indicating robust performance.
Applications include synchronous rectification and secondary side DC/DC conversion, where its low on-resistance and high current handling are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The maximum continuous drain current is 50A at 25°C case temperature.
The Rds(on) is a maximum of 2.8mOhm at 20A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +150°C.
It is in a PowerPAK SO-8 surface mount package.