| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,659 pcs
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1659 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,611 pcs
|
1611 pcs | On Request | 1 | On Request | On Request | 0950+ | On Request | On Request |
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The Vishay Dale SIR410DP-T1-GE3 is a single N-Channel MOSFET designed for power conversion applications. It features a 20V drain-source voltage (Vds) and a maximum continuous drain current of 35A at 25°C case temperature.
Key electrical characteristics include a low on-resistance of 4.8mOhm at 20A and 10V Vgs, and a gate charge (Qg) of 41nC maximum at 10V Vgs. The device operates over a wide temperature range of -55°C to 150°C.
This MOSFET is housed in a PowerPAK SO-8 surface mount package, suitable for space-constrained designs. It is tested for 100% Rg and UIS, indicating robust performance and reliability for demanding applications like DC/DC converters in notebooks and POL systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SIR410DP-T1-GE3 is 20V.
The SIR410DP-T1-GE3 has a maximum continuous drain current of 35A when measured at the case temperature of 25°C.
The Rds On (Max) for the SIR410DP-T1-GE3 at Vgs = 10V is 4.8mOhm.
The operating junction and storage temperature range for the SIR410DP-T1-GE3 is -55°C to +150°C.
The SIR410DP-T1-GE3 MOSFET is supplied in a PowerPAK SO-8 package.
The RoHS status for the SIR410DP-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SIR410DP-T1-GE3 is 1 Unlimited.