| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,490 pcs
|
2490 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR404DP-T1-GE3 is a single N-Channel Power MOSFET designed for DC/DC applications. It offers a drain-source voltage (Vds) of 20V and a continuous drain current (Id) of up to 60A. The MOSFET exhibits a low on-resistance, with a maximum of 1.6mOhm at 20A and 10Vgs.
Key electrical characteristics include a gate-source voltage (Vgs) of ±12V and a gate threshold voltage (Vgs(th)) of 1.5V at 250µA. The input capacitance (Ciss) is 8130pF at 10V, and the gate charge (Qg) is a maximum of 97nC at 4.5V.
This device is packaged in a PowerPAK SO-8 surface-mount package. It operates within a junction temperature range of -55°C to +150°C. The maximum power dissipation is 104W at 25°C case temperature and 6.25W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V
PowerPAK SO-8
-55°C to 150°C
60A at Tc=25°C
1.6mOhm maximum
1.5V maximum at 250µA
104W at Tc=25°C