| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,675 pcs
|
5675 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIR403EDP-T1-GE3 is a P-Channel MOSFET designed for power management applications such as adaptor and load switching. It offers a 30V drain-source voltage and a continuous drain current of up to 40A at 25°C case temperature.
Key electrical characteristics include an extremely low on-resistance (RDS(on)) of 6.5 mOhm at 13A and 10V Vgs, and a gate charge (Qg) of 153 nC at 10V Vgs. The device utilizes TrenchFET® power MOSFET technology for enhanced performance.
This MOSFET operates within a temperature range of -55°C to 150°C. It is packaged in a surface-mount PowerPAK SO-8 configuration, suitable for compact designs. The extended Vgs range of ±25V makes it suitable for adaptor switch applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is -30 V.
The continuous drain current is -40 A at a case temperature of 25 °C.
The maximum on-state resistance is 6.5 mOhm at Vgs = -10 V.
The operating junction and storage temperature range is -55 °C to 150 °C.
It is available in a PowerPAK SO-8 surface-mount package.
The maximum power dissipation is 56.8 W at a case temperature of 25 °C.