SIR182DP-T1-RE3 The Vishay Dale SIR182DP-T1-RE3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low 2.8mOhm Rds On at 10V gate-source voltage.
Mfr Part #:

SIR182DP-T1-RE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR182DP-T1-RE3 is an N-Channel MOSFET with a 60V drain-source voltage rating. It features a low 2.8mOhm Rds On at 10V gate-source voltage.
✓ Total Stock: 117,988 pcs
$ Price Range: $0.99

SIR182DP-T1-RE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
99,000 pcs
99000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
16,988 pcs
16988 pcs On Request 1 On Request On Request 22+ On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SIR182DP-T1-RE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

SIR182DP-T1-RE3 Description

Short technical summary and product information.

The Vishay Dale SIR182DP-T1-RE3 is an N-Channel Power MOSFET designed for high-performance applications. It offers a 60V drain-source voltage and a low on-resistance of 2.8mOhm at 15A and 10V gate-source voltage.

 

This MOSFET features a TrenchFET Gen IV power stage, optimized for low RDS-Qg and RDS-Qoss figures of merit. It is rated for a continuous drain current of 117A at 25°C case temperature and can handle pulsed drain currents up to 200A. The operating temperature range is -55°C to +150°C.

 

Packaged in a PowerPAK SO-8 surface-mount package, the SIR182DP-T1-RE3 is suitable for applications such as synchronous rectification, primary side switching, and DC/DC converters. Its thermal resistance is rated at 1.8°C/W junction-to-case.

 

Key electrical characteristics include a gate charge of 64nC maximum at 10V and an input capacitance of 3250pF maximum at 30V. The device is RoHS3 compliant and has an MSL of 1.

SIR182DP-T1-RE3 Quick Information

Product Type: MOSFET
Series: SIR
Canonical Name: Vishay Dale SiR182DP N-Channel 60V Power MOSFET
Subcategory: N-Channel

SIR182DP-T1-RE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR182DP-T1-RE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR182DP-T1-RE3 Features

  • N-Channel 60V TrenchFET Gen IV power MOSFET.
  • Very low RDS-Qg figure-of-merit.
  • Tuned for lowest RDS-Qoss FOM.
  • 100% Rg and UIS tested.
  • PowerPAK SO-8 surface mount package.

SIR182DP-T1-RE3 Applications

  • Used for synchronous rectification.
  • Suitable for primary side switching.
  • Ideal for DC/DC converters.
  • Applied in motor drive switches.

SIR182DP-T1-RE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SIR182DP-T1-RE3?

The maximum drain-source voltage is 60 V.

What is the maximum continuous drain current at 25°C case temperature?

The maximum continuous drain current is 117 A at Tc = 25 °C.

What is the typical on-resistance of this MOSFET?

The maximum on-resistance is 2.8 mOhm at 15 A, 10 V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is the SIR182DP-T1-RE3 available in?

The device is available in a PowerPAK SO-8 surface mount package.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3.6 V at 250 µA.

Home
Account

Categories