| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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99,000 pcs
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99000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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16,988 pcs
|
16988 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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| Voltage |
The Vishay Dale SIR182DP-T1-RE3 is an N-Channel Power MOSFET designed for high-performance applications. It offers a 60V drain-source voltage and a low on-resistance of 2.8mOhm at 15A and 10V gate-source voltage.
This MOSFET features a TrenchFET Gen IV power stage, optimized for low RDS-Qg and RDS-Qoss figures of merit. It is rated for a continuous drain current of 117A at 25°C case temperature and can handle pulsed drain currents up to 200A. The operating temperature range is -55°C to +150°C.
Packaged in a PowerPAK SO-8 surface-mount package, the SIR182DP-T1-RE3 is suitable for applications such as synchronous rectification, primary side switching, and DC/DC converters. Its thermal resistance is rated at 1.8°C/W junction-to-case.
Key electrical characteristics include a gate charge of 64nC maximum at 10V and an input capacitance of 3250pF maximum at 30V. The device is RoHS3 compliant and has an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The maximum continuous drain current is 117 A at Tc = 25 °C.
The maximum on-resistance is 2.8 mOhm at 15 A, 10 V.
The operating temperature range is -55°C to 150°C.
The device is available in a PowerPAK SO-8 surface mount package.
The maximum gate threshold voltage is 3.6 V at 250 µA.