SIR172DP-T1-GE3 The Vishay Dale SIR172DP-T1-GE3 is an N-Channel MOSFET designed for high-side synchronous rectifier operation. It features a 30V drain-source voltage and a low Rds On of 8.9mOhm.
Mfr Part #:

SIR172DP-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR172DP-T1-GE3 is an N-Channel MOSFET designed for high-side synchronous rectifier operation. It features a 30V drain-source voltage and a low Rds On of 8.9mOhm.
✓ Total Stock: 28,620 pcs
$ Price Range: $0.99

SIR172DP-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
27,000 pcs
27000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,620 pcs
1620 pcs On Request 1 On Request On Request 1345+ On Request On Request

SIR172DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR172DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiR172DP is an N-Channel Power MOSFET with a 30V drain-source voltage rating. It is optimized for high-side synchronous rectifier operation and features TrenchFET technology for low on-resistance. The device offers a typical Rds On of 8.9mOhm at 16.1A and 10V Vgs, and a maximum continuous drain current of 20A at 25°C case temperature.

 

This MOSFET is housed in a low-profile PowerPAK SO-8 package, measuring 6.15mm x 5.15mm, with a height of only 1.07mm. It is suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C.

 

The SiR172DP is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. It is tested 100% for R g and UIS, making it a reliable choice for applications such as notebook CPU core and high-side switching.

SIR172DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SiR172DP N-Channel 30V Power MOSFET
Subcategory: N-Channel

SIR172DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR172DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR172DP-T1-GE3 Features

  • N-Channel 30V Power MOSFET
  • Low Rds On of 8.9mOhm
  • 20A Continuous Drain Current
  • PowerPAK SO-8 low profile package
  • Halogen-free and RoHS3 compliant

SIR172DP-T1-GE3 Applications

  • Notebook CPU core applications
  • High-side switch circuits
  • Synchronous rectifier operation

SIR172DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating for the SIR172DP-T1-GE3?

The drain-source voltage rating is 30V.

What is the maximum on-resistance of the SIR172DP-T1-GE3?

The maximum on-resistance is 8.9mOhm at 16.1A and 10V Vgs.

What is the continuous drain current for the SIR172DP-T1-GE3?

The continuous drain current is 20A at 25°C case temperature.

What package type is the SIR172DP-T1-GE3 MOSFET in?

The MOSFET is in a PowerPAK SO-8 package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

Is the SIR172DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is this MOSFET halogen-free?

Yes, it is halogen-free.

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