| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
397 pcs
|
397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
397 pcs
|
397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR170DP-T1-RE3 is an N-Channel MOSFET designed for power applications. It features a TrenchFET Gen IV power MOSFET technology, offering a very low RDS x Qg figure-of-merit.
Key electrical specifications include a drain-source voltage (Vds) of 100V. The continuous drain current (Id) is rated at 95A when measured at the case temperature (Tc) of 25°C, and 23.2A at an ambient temperature (Ta) of 25°C. The on-resistance (Rds On) is a maximum of 0.0048 Ohms at a gate-source voltage (Vgs) of 10V, and 0.00585 Ohms at 4.5V Vgs. The typical gate charge (Qg) is 42nC.
This MOSFET is housed in a PowerPAK SO-8 package, suitable for surface mounting. The operating junction and storage temperature range is -55°C to 150°C.
Applications include synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, motor drive control, and battery and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 100V.
The maximum continuous drain current is 95A at TC=25°C, 76A at TC=70°C, 23.2A at TA=25°C, and 18.6A at TA=70°C.
Maximum on-resistance is 4.8 mΩ at VGS=10V and 5.85 mΩ at VGS=4.5V.
The operating junction and storage temperature range is -55°C to +150°C.
The device is available in a PowerPAK SO-8 surface mount package.
The maximum pulsed drain current is 200A (100 μs pulse).
The maximum gate threshold voltage is 2.5V at a drain current of 250 µA.