| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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211 pcs
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211 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The SIR168DP-T1-GE3 is an N-Channel MOSFET manufactured by Vishay Dale. This component is designed for power applications, featuring a 30V drain-to-source voltage (Vdss) and a continuous drain current of 40A at 25°C. The on-resistance (Rds On) is specified as a maximum of 4.4mOhm at 15A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and is housed in a PowerPAK® SO-8 surface mount package. It operates within a temperature range of -55°C to 150°C (TJ). The gate threshold voltage (Vgs(th)) is a maximum of 2.4V at 250µA, and the maximum gate-source voltage (Vgs) is ±20V.
The device has a maximum power dissipation of 5W (Ta) and 34.7W (Tc). It is classified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. The SIR168DP-T1-GE3 is part of the TrenchFET® series.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SIR168DP-T1-GE3 is 30V.
The continuous drain current (Id) rating for the SIR168DP-T1-GE3 is 40A at 25°C.
The maximum on-resistance (Rds On) for the SIR168DP-T1-GE3 is 4.4mOhm at 15A and 10V.
The operating temperature range for the SIR168DP-T1-GE3 is -55°C to 150°C (TJ).
The SIR168DP-T1-GE3 MOSFET is supplied in a PowerPAK® SO-8 surface mount package.
The SIR168DP-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SIR168DP-T1-GE3 is 1 Unlimited.