SIR167DP-T1-GE3 The Vishay SIR167DP-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low Rds On of 5.5mOhm at 10V gate-source voltage and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIR167DP-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay SIR167DP-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low Rds On of 5.5mOhm at 10V gate-source voltage and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 57,900 pcs
$ Price Range: $0.99

SIR167DP-T1-GE3 Available from 4 distributors

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SIR167DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR167DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SIR167DP-T1-GE3 is a P-Channel power MOSFET designed for various switching applications. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 60A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 5.5mOhm at 15A and 10V Vgs, and 9.3mOhm at 15A and 4.5V Vgs. The typical gate charge (Qg) is 36nC at 10V Vgs. The MOSFET operates within a temperature range of -55°C to +150°C.

 

This device utilizes TrenchFET Gen III technology and is packaged in a PowerPAK SO-8 surface-mount package. It is suitable for applications such as adapter and charger switches, load switches, and battery management systems. The component is lead (Pb)-free and halogen-free.

 

Absolute maximum ratings include a continuous drain current of -60A (Tc=25°C) and a pulsed drain current of -120A. Power dissipation is rated at 65.8W (Tc=25°C).

SIR167DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: SiR
Canonical Name: P-Channel 30 V (D-S) MOSFET
Subcategory: P-Channel

SIR167DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIR167DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR167DP-T1-GE3 Features

  • P-Channel 30V power MOSFET.
  • Low Rds On of 5.5mOhm at 10V.
  • 60A continuous drain current.
  • PowerPAK SO-8 surface mount package.
  • Lead (Pb)-free and halogen-free.

SIR167DP-T1-GE3 Applications

  • Ideal for adapter and charger switch
  • Use in high-side load switch
  • Suitable for battery management applications
  • Designed for power switching circuits

SIR167DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the SIR167DP-T1-GE3?

The drain-source voltage (Vds) is 30 V.

What is the maximum continuous drain current for the SIR167DP-T1-GE3?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the Rds On (Max) at Vgs = 10V for this MOSFET?

The Rds On (Max) at Vgs = 10V is 5.5mOhm.

What is the operating temperature range for the SIR167DP-T1-GE3?

The operating temperature range is -55°C to +150°C.

What package type is the SIR167DP-T1-GE3 MOSFET supplied in?

The MOSFET is supplied in a PowerPAK SO-8 package.

Is the SIR167DP-T1-GE3 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1 Unlimited.

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