| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20,721 pcs
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20721 pcs | On Request | 1 | On Request | On Request | 1226+ | On Request | On Request |
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The Vishay Dale SIR166DP-T1-GE3 is a TrenchFET® power MOSFET designed for applications such as notebook PC core, VRM, and POL. This N-Channel MOSFET features a drain-source voltage of 30V and a continuous drain current of 40A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 3.2mOhm at 15A and 10V Vgs, and a gate charge of 77nC at 10V Vgs. The device operates over a temperature range of -55°C to +150°C.
Packaged in a PowerPAK SO-8 surface-mount package, the SIR166DP-T1-GE3 is suitable for space-constrained designs. It is tested 100% for Rg and UIS, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
3.2 mOhm maximum.
40 A at case temperature 25°C.
77 nC at 10V.
-55°C to +150°C.
PowerPAK SO-8.