SIR164DP-T1-GE3 The Vishay Dale SIR164DP-T1-GE3 is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 50A.
Mfr Part #:

SIR164DP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIR164DP-T1-GE3 is an N-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 50A.
✓ Total Stock: 237,734 pcs
$ Price Range: $0.99

SIR164DP-T1-GE3 Available from 3 distributors

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226,000 pcs
226000 pcs On Request 1 On Request On Request On Request On Request On Request
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6,000 pcs
6000 pcs On Request 1 On Request On Request 19+ On Request On Request
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5,734 pcs
5734 pcs On Request 1 On Request On Request On Request On Request On Request

SIR164DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR164DP-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SIR164DP-T1-GE3 is a single N-Channel MOSFET from the Metal Oxide technology family. It is designed for surface mount applications and comes in a PowerPAK SO-8 package.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 50A at a case temperature (Tc). The on-resistance (Rds On) is a maximum of 2.5mOhm at 15A and 10V gate-source voltage. It also features a gate charge (Qg) of 123 nC maximum at 10V and an input capacitance (Ciss) of 3950 pF maximum at 15V.

 

The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Its maximum power dissipation is rated at 69W when measured at the case (Tc) and 5.2W when measured at ambient temperature (Ta).

 

This component is suitable for various power management applications where high current and low on-resistance are critical. Its surface mount package facilitates integration into compact electronic designs.

SIR164DP-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIR164DP-T1-GE3 N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SIR164DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIR164DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR164DP-T1-GE3 Features

  • N-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 50A continuous drain current.
  • Low 2.5mOhm on-resistance.
  • Surface mount PowerPAK SO-8 package.

SIR164DP-T1-GE3 Applications

  • Used in DC-DC converter circuits
  • Suitable for battery management systems
  • Ideal for motor control applications
  • Designed for power load switching
  • Used in OR-ing and protection circuits

SIR164DP-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the SIR164DP-T1-GE3?

The drain-to-source voltage (Vdss) is 30V.

What package type is the SIR164DP-T1-GE3?

The SIR164DP-T1-GE3 is available in a PowerPAK SO-8 package.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is the SIR164DP-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the maximum continuous drain current?

The maximum continuous drain current is 50A.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 2.5mOhm at 15A and 10V.

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