SIR158DP-T1-GE3 The Vishay SIR158DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 60A. It features a low Rds On of 1.8mOhm at 10V gate-source voltage.
Mfr Part #:

SIR158DP-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay SIR158DP-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 60A. It features a low Rds On of 1.8mOhm at 10V gate-source voltage.
✓ Total Stock: 112,400 pcs
$ Price Range: $0.99

SIR158DP-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
90,400 pcs
90400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request 14+ On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

SIR158DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIR158DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SIR158DP-T1-GE3 is a TrenchFET Gen III power MOSFET designed for low-side switching applications in DC/DC converters, servers, POL, and VRM systems.

 

This N-Channel MOSFET offers a 30V drain-source breakdown voltage and a continuous drain current rating of 60A at 25°C case temperature. Its low on-resistance is 1.8mOhm at 20A drain current and 10V gate-source voltage, and 2.3mOhm at 20A drain current and 4.5V gate-source voltage. The device has a maximum gate charge of 130nC at 10V gate-source voltage.

 

Packaged in a PowerPAK SO-8, this surface-mount MOSFET operates within a junction temperature range of -55°C to 150°C. It is tested 100% for Rg and UIS, ensuring reliability in demanding applications. The device is also specified as lead (Pb)-free and halogen-free.

 

Key electrical characteristics include a maximum power dissipation of 83W at 25°C case temperature and 5.4W at 25°C ambient temperature. Thermal resistance is rated at 11.5°C/W junction-to-case and 23°C/W junction-to-ambient.

SIR158DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: SiR158DP N-Channel 30 V (D-S) MOSFET
Subcategory: N-Channel

SIR158DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free and halogen-free

SIR158DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIR158DP-T1-GE3 Features

  • TrenchFET Gen III power MOSFET technology.
  • 30V drain-source breakdown voltage.
  • 60A continuous drain current.
  • Low Rds On: 1.8mOhm at 10V Vgs.
  • Surface mount PowerPAK SO-8 package.

SIR158DP-T1-GE3 Applications

  • Low-side switch for DC/DC converters.
  • Suitable for server power management.
  • Used in Point-of-Load (POL) applications.
  • Applicable in Voltage Regulator Modules (VRM).

SIR158DP-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SIR158DP-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current for the SIR158DP-T1-GE3?

The maximum continuous drain current is 60A at 25°C case temperature.

What is the Rds On (Max) at 10V gate-source voltage for this MOSFET?

The Rds On (Max) is 1.8mOhm at 20A drain current and 10V gate-source voltage.

What package type is the SIR158DP-T1-GE3 MOSFET supplied in?

The SIR158DP-T1-GE3 is supplied in a PowerPAK SO-8 package.

What is the operating temperature range for the SIR158DP-T1-GE3?

The operating junction temperature range is -55°C to 150°C.

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