| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,188 pcs
|
2188 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIR140DP-T1-RE3 is an N-Channel MOSFET designed for various power applications. It offers a drain-source voltage (Vds) of 25V and a maximum continuous drain current (Id) of 100A at case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 0.67mOhm at 20A and 10V Vgs, and a typical gate charge (Qg) of 52.8nC. The gate-source voltage range is +20V to -16V, with a gate threshold voltage (Vgs(th)) of 2.1V at 250µA.
This MOSFET is housed in a PowerPAK SO-8 surface mount package. It operates within a temperature range of -55°C to 150°C (TJ). The device is suitable for applications such as synchronous rectification, high power density DC/DC converters, and load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V maximum.
100A at Tc=25°C, 71.9A at Ta=25°C.
0.67mOhm at Vgs=10V, Id=20A; 0.90mOhm at Vgs=4.5V.
-55°C to 150°C (junction).
PowerPAK SO-8 surface mount.
52.8nC typical, 170nC maximum at Vgs=10V.
8150pF at Vds=10V.