| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,353 pcs
|
9353 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIR112DP-T1-RE3 is an N-Channel MOSFET designed for various power applications. It features a 40V drain-source voltage and a continuous drain current rating of 133A at 25°C case temperature.
This MOSFET utilizes TrenchFET® Gen IV technology, offering optimized switching characteristics with a Qgd/Qgs ratio less than 1. It is tested for Rg and UIS.
The component is supplied in a PowerPAK® SO-8 package, suitable for surface mounting. Key electrical specifications include a maximum on-resistance of 1.96 mOhm at 10A and 10V Vgs, and a gate charge of 89 nC typical at 10V Vgs.
Applications include synchronous rectification, ORing, high power density DC/DC converters, VRMs, embedded DC/DC, DC/AC inverters, and load switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V maximum.
PowerPAK SO-8 surface mount package.
-55°C to 150°C junction temperature.
1.96mOhm at Vgs=10V.
133A at case temperature 25°C.
89nC at Vgs=10V.