| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,748 pcs
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9748 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Vishay Dale SIR106ADP-T1-RE3 is a high-performance N-Channel MOSFET designed for demanding applications. It features a maximum drain-source voltage of 100V and a low on-state resistance of 8mOhm when tested at 15A and 10V gate-source voltage. The continuous drain current capability is 65.8A at 25°C case temperature, and 16.1A at 25°C ambient temperature.
This MOSFET utilizes TrenchFET Gen IV technology, offering a very low RDS x Qg figure-of-merit. It is 100% Rg and UIS tested, ensuring reliability. The device operates over a wide temperature range from -55°C to 150°C.
Packaged in a PowerPAK SO-8 surface-mount package, the SIR106ADP-T1-RE3 is suitable for applications such as synchronous rectification, primary side switching, DC/DC converters, power supplies, and motor drive control. Its robust design and electrical characteristics make it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The device is available in a PowerPAK® SO-8 surface-mount package.
The junction temperature range is -55°C to 150°C.
The maximum on-resistance is 8mOhm at 15A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 4V at 250µA drain current.
The continuous drain current is 65.8A at case temperature 25°C and 16.1A at ambient temperature 25°C.
The maximum power dissipation is 83.3W at case temperature 25°C and 5W at ambient temperature 25°C.