| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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580 pcs
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580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
580 pcs
|
580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix U291-E3 is an N-Channel Junction Field-Effect Transistor (JFET) suitable for electronic circuits requiring specific switching or amplification characteristics. This component offers a breakdown voltage of 30V and a maximum power dissipation of 500mW.
Key electrical parameters include a typical drain current (Idss) of 200mA at 10V Vds and a typical gate cutoff voltage (VGS off) of 1.5V at 3nA Id. The typical on-state resistance (RDS(On)) is 7 Ohms, and the input capacitance (Ciss) is a maximum of 160pF at 0V Vds.
This JFET is designed for through-hole mounting and comes in a TO-206AC (TO-52) metal can package. The operating temperature range is from -55°C to 150°C.
Compliance information indicates RoHS3 compliance, MSL 1 unlimited, and REACH unaffected status. This part is suitable for applications where a reliable N-Channel JFET with these specifications is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 30V.
The typical drain current (Idss) is 200mA at 10V Vds.
The gate cutoff voltage (VGS off) is typically 1.5V at 3nA Id.
The maximum power dissipation is 500mW.
The operating temperature range is -55°C to 150°C.
The U291-E3 is a through-hole mounted component.
The U291-E3 is supplied in a TO-206AC (TO-52) metal can package.