SIJ478DP-T1-GE3 The Vishay SIJ478DP-T1-GE3 is an N-Channel MOSFET with 80V drain-source voltage and 60A continuous drain current. It features low on-resistance and is housed in a PowerPAK SO-8 package.
Mfr Part #:

SIJ478DP-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SIJ478DP-T1-GE3 is an N-Channel MOSFET with 80V drain-source voltage and 60A continuous drain current. It features low on-resistance and is housed in a PowerPAK SO-8 package.
✓ Total Stock: 2,900 pcs
$ Price Range: $0.99

SIJ478DP-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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2,900 pcs
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SIJ478DP-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIJ478DP-T1-GE3 Description

Short technical summary and product information.

The Vishay SIJ478DP-T1-GE3 is a high-performance N-Channel Power MOSFET designed for demanding applications. It boasts a drain-source voltage (Vds) of 80V and a continuous drain current (Id) of up to 60A at 25°C case temperature.

 

This MOSFET offers a maximum on-resistance (Rds On) as low as 8mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer and minimizing heat generation. It features a typical gate charge (Qg) of 17.1 nC and a maximum gate-source voltage (Vgs) of ±20V.

 

The device operates within a junction temperature range of -55°C to +150°C and is packaged in a surface-mount PowerPAK SO-8 configuration. Its TrenchFET® technology provides enhanced performance and reliability.

 

Applications include primary side switching, synchronous rectification, DC/AC inverters, and LED backlighting. The low thermal resistance (1.5°C/W junction-to-case) supports efficient heat dissipation.

SIJ478DP-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET®
Canonical Name: Vishay SIJ478DP-T1-GE3 N-Channel 80V Power MOSFET
Subcategory: N-Channel

SIJ478DP-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIJ478DP-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIJ478DP-T1-GE3 Features

  • 80V drain-source voltage rating.
  • 60A continuous drain current capability.
  • Low 8mOhm maximum on-resistance.
  • TrenchFET® power MOSFET technology.
  • Surface mount PowerPAK SO-8 package.

SIJ478DP-T1-GE3 Applications

  • Primary side switching applications.
  • Efficient synchronous rectification.
  • Used in DC/AC inverters.
  • Suitable for LED backlighting.

SIJ478DP-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SIJ478DP-T1-GE3?

The maximum drain-to-source voltage is 80V.

What is the maximum continuous drain current at 25°C case temperature?

The maximum continuous drain current is 60A at a case temperature of 25°C.

What is the maximum on-resistance at 10V gate drive?

The maximum on-resistance is 8mΩ at 20A drain current with a 10V gate drive.

What is the operating junction and storage temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package is the SIJ478DP-T1-GE3 available in?

The device is available in a PowerPAK SO-8 surface-mount package.

What is the maximum power dissipation at 25°C case temperature?

The maximum power dissipation at a case temperature of 25°C is 62.5W.

What is the maximum gate-source threshold voltage?

The maximum gate-source threshold voltage is 2.6V at a drain current of 250µA.

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