| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
75 pcs
|
75 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Siliconix SIHU3N50D-E3 is an N-Channel MOSFET designed for various electronic applications. It features a high drain-to-source voltage (Vdss) of 500V and can handle a continuous drain current (Id) of 3A at 25°C.
The MOSFET has a maximum on-resistance (Rds On) of 3.2 Ohms at 2.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 5V at 250µA, and the maximum gate-source voltage is ±30V. Input capacitance (Ciss) is rated at a maximum of 175pF at 100V.
With a maximum power dissipation of 69W (Tc), this component operates within a temperature range of -55°C to 150°C (TJ). It utilizes Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology.
The SIHU3N50D-E3 is supplied in a TO-251AA package, also known as TO-251-3 Short Leads or IPak. It is designed for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the SIHU3N50D-E3 is 500V.
The continuous drain current (Id) at 25°C for the SIHU3N50D-E3 is 3A.
The maximum on-resistance (Rds On) for the SIHU3N50D-E3 is 3.2 Ohms at 2.5A and 10V.
The operating temperature range for the SIHU3N50D-E3 is -55°C to 150°C.
The SIHU3N50D-E3 is supplied in a TO-251AA package.