| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,038 pcs
|
2038 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Vishay SIHP8N50D-GE3 is an N-Channel Power MOSFET from the D Series, designed for optimal efficiency and operation. It features a maximum drain-source voltage of 500V and a continuous drain current of 8.7A at 25°C.
Key electrical characteristics include a maximum on-resistance of 0.85 Ohms at 4A and 10V gate drive, and a typical gate charge of 30nC at 10V. The device operates within a junction temperature range of -55°C to 150°C.
Packaged in a standard TO-220AB through-hole package, this MOSFET is suitable for applications in consumer electronics, server and telecom power supplies, and industrial systems like welding and motor drives. Its design emphasizes low on-resistance, reduced switching losses, and high body diode ruggedness.
This MOSFET is rated for a maximum power dissipation of 156W (Tc) and has a gate-source voltage rating of ±30V. The TO-220AB package facilitates easy mounting on PCBs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
-55°C to 150°C (junction).
TO-220AB (through hole).
8.7A at Tc=25°C.
0.85Ω maximum at Vgs=10V.
30 nC at Vgs=10V.
527 pF at Vds=100V.