| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,064 pcs
|
4064 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIHP33N60E-GE3 is an N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 33A at case temperature.
Key electrical characteristics include a maximum on-resistance of 99mOhm at 16.5A and 10V gate-source voltage, and a gate threshold voltage of 4V at 250µA. The device has an input capacitance (Ciss) of 3508 pF at 100V and a maximum gate charge (Qg) of 150 nC at 10V.
This MOSFET is housed in a TO-220AB package, suitable for through-hole mounting. It operates across a wide temperature range from -55°C to 150°C (TJ) and has a maximum power dissipation of 278W (Tc).
Applications for this component include server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits. It is also suitable for industrial applications like welding, induction heating, and motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 600V.
The maximum continuous drain current is 33A.
The maximum on-resistance is 99mOhm when tested at 16.5A drain current and 10V gate-source voltage.
The component is supplied in a TO-220AB package and is designed for through-hole mounting.
The operating junction and storage temperature range is -55°C to 150°C.
The maximum gate charge (Qg) is 150 nC at 10V gate-source voltage.