| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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180 pcs
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180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SIHP30N60E-GE3 is an N-Channel Power MOSFET designed for high-performance applications. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current of 29A at 25°C case temperature. The MOSFET offers a low on-resistance of 125mOhm at 15A and 10V gate-source voltage, contributing to reduced conduction losses.
With a maximum power dissipation of 250W and an operating temperature range of -55°C to 150°C, this device is suitable for demanding thermal environments. Key electrical characteristics include a gate charge (Qg) of 130nC at 10V and an input capacitance (Ciss) of 2600pF at 100V.
The device utilizes MOSFET (Metal Oxide) technology and is housed in a TO-220AB package, designed for through-hole mounting. Its features like low figure-of-merit, low input capacitance, and ultra-low gate charge make it suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and industrial motor drives.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SIHP30N60E-GE3 is 600V.
The continuous drain current for the SIHP30N60E-GE3 is 29A at a case temperature of 25°C.
The on-resistance (Rds(on)) of the SIHP30N60E-GE3 is a maximum of 125mOhm when tested at 15A drain current and 10V gate-source voltage.
The maximum gate charge (Qg) for the SIHP30N60E-GE3 is 130nC at 10V gate-source voltage.
The operating junction and storage temperature range for the SIHP30N60E-GE3 is -55°C to +150°C.
The SIHP30N60E-GE3 is available in a TO-220AB package designed for through-hole mounting.