| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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11,000 pcs
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11000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHP30N60E-E3 is an N-channel enhancement-mode Power MOSFET. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 29A at 25°C case temperature. The MOSFET exhibits a low on-state resistance of 125mΩ maximum at 15A and 10V gate-source voltage, contributing to reduced conduction losses.
With a maximum power dissipation of 250W and an operating temperature range from -55°C to 150°C, this device is suitable for demanding applications. Key electrical characteristics include a gate charge of 130nC maximum and an input capacitance of 2600pF. The device is housed in a standard TO-220AB package, designed for through-hole mounting.
Applications for the SIHP30N60E-E3 include server and telecom power supplies, switch-mode power supplies (SMPS), power factor correction (PFC) power supplies, lighting (HID, fluorescent ballast, LED), and industrial applications such as welding, induction heating, and motor drives. Its avalanche energy rating (UIS) and low figure-of-merit (FOM) make it a robust choice for various power conversion systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600 V.
It is available in a TO-220-3 (TO-220AB) through-hole package.
The operating junction and storage temperature range is -55 °C to 150 °C.
The continuous drain current is 29 A at case temperature 25 °C and 18 A at 100 °C.
The maximum on-state resistance is 125 mΩ at Vgs=10 V and Id=15 A.
The maximum gate threshold voltage is 4 V at 250 µA drain current.