| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,730 pcs
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1730 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs(th) (Max) @ Id |
The Vishay Dale SIHP22N60S-E3 is a single N-Channel Power MOSFET from the S Series. It features a high drain-source breakdown voltage of 600V and a maximum continuous drain current of 22A at 25°C case temperature, derating to 13A at 100°C.
This MOSFET has a low on-resistance of 190mOhm at 11A and 10V Vgs, contributing to efficient power handling. The gate charge (Qg) is a maximum of 110nC at 10V Vgs. It is designed for applications requiring high avalanche energy capability, with a single pulse avalanche energy rating of 690mJ.
The device is housed in a TO-220AB package with through-hole mounting. It operates within a junction temperature range of -55°C to +150°C. The MOSFET is suitable for hard switching topologies, PFC power supply stages, solar inverters, UPS, motor control, and lighting applications.
Key electrical characteristics include a gate-source threshold voltage of 4V maximum at 250µA and a drain-source voltage slope of 37V/ns at 125°C. The maximum power dissipation is 250W in the TO-220AB package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 600V.
The maximum continuous drain current is 22A at 25°C case temperature and 13A at 100°C case temperature.
The Rds(on) is a maximum of 190mOhm at 11A drain current and 10V gate-source voltage.
The maximum gate charge is 110nC at 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +150°C.
This MOSFET is in a TO-220AB package.
Yes, this product is RoHS3 Compliant.