SIHP22N60E-GE3 The Vishay Dale SIHP22N60E-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 21A continuous current rating. It is housed in a TO-220AB package.
Mfr Part #:

SIHP22N60E-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHP22N60E-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 21A continuous current rating. It is housed in a TO-220AB package.
✓ Total Stock: 250 pcs
$ Price Range: $0.99

SIHP22N60E-GE3 Available from 1 distributor

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✓ Non-Authorised
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250 pcs
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SIHP22N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHP22N60E-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHP22N60E-GE3 is an N-Channel Power MOSFET designed for various power supply applications. It features a high drain-source breakdown voltage of 600V and a continuous drain current capability of 21A at 25°C case temperature.

 

Key electrical characteristics include a low on-resistance of 180mOhm at 11A and 10V gate-source voltage, and a maximum gate charge of 86nC. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 227W.

 

This MOSFET is suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC). It is available in a standard TO-220AB package with through-hole mounting.

 

The device offers features like low figure-of-merit (FOM) Ron x Qg, low input capacitance (Ciss), reduced switching and conduction losses, and is avalanche energy rated (UIS).

SIHP22N60E-GE3 Quick Information

Product Type: MOSFET
Series: E
Canonical Name: Vishay Dale SIHP22N60E-GE3 N-Channel MOSFET
Subcategory: Power MOSFET

SIHP22N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIHP22N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHP22N60E-GE3 Features

  • 600V drain-source breakdown voltage.
  • 21A continuous drain current.
  • Low 180mOhm on-resistance.
  • 86nC maximum gate charge.
  • TO-220AB package, through hole mounting.

SIHP22N60E-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications like welding.
  • Renewable energy systems.

SIHP22N60E-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHP22N60E-GE3?

The maximum drain-source voltage is 600V.

What is the continuous drain current rating?

The continuous drain current is 21A at 25°C case temperature.

What is the typical on-resistance of this MOSFET?

The Rds(on) is a maximum of 180mOhm at 11A and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the SIHP22N60E-GE3 available in?

It is available in a TO-220AB package with through-hole mounting.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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