| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHP22N60E-E3 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 21A at 25°C case temperature.
With a low on-resistance of 180mOhm at 11A and 10V gate-source voltage, this MOSFET minimizes conduction losses. It also offers a low input capacitance and a gate charge of 86 nC maximum at 10V, contributing to efficient switching performance.
The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 227W. Its robust construction and electrical characteristics make it suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), power factor correction (PFC), lighting, and industrial power systems.
The SIHP22N60E-E3 is housed in a standard TO-220AB package, facilitating through-hole mounting. This package type is common in power electronics for its ease of assembly and thermal management capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum 600V, nominal 650V at maximum junction temperature.
Maximum 0.18Ω at VGS=10V, ID=11A, 25°C.
21A at case temperature 25°C.
-55°C to +150°C junction temperature.
TO-220-3 (TO-220AB) through-hole package.
Maximum 86nC at VGS=10V.
227W maximum at case temperature 25°C.