| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
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This Vishay Dale SIHP21N60EF-GE3 is an N-Channel Power MOSFET designed for various applications. It features a maximum drain-source voltage of 600V and a continuous drain current of 21A at 25°C case temperature.
The MOSFET offers a low on-resistance of 176mOhm at 11A and 10V gate-source voltage, with a maximum gate charge of 84nC at 10V. Its power dissipation is rated at 227W at 25°C case temperature.
The operating temperature range for this device is -55°C to 150°C. It is packaged in a standard TO-220AB package and utilizes through-hole mounting.
Key electrical characteristics include a gate-source voltage range of ±30V and an input capacitance of 2030pF at 100V. The device is also avalanche energy rated at 367mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
The continuous drain current is 21A at 25°C case temperature and 14A at 100°C case temperature.
The maximum on-resistance is 176mOhm at 11A drain current and 10V gate-to-source voltage.
It is available in a TO-220AB through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum total gate charge is 84nC at 10V gate-to-source voltage.