| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHP18N50C-E3 is a single N-Channel Power MOSFET from the MOSFET (Metal Oxide) technology family. It features a high drain-source breakdown voltage of 500V and a continuous drain current rating of 18A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 270mOhm at 10A and 10V gate-source voltage, and a gate charge of 76nC maximum at 10V. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a TO-220AB package and utilizes through-hole mounting. It is suitable for applications requiring high voltage switching and power handling capabilities, with a maximum power dissipation of 223W.
The device also boasts a single pulse avalanche energy of 361mJ and a pulsed drain current of 72A, indicating robust performance under transient conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 500V.
The continuous drain current is 18A at a case temperature of 25°C.
The maximum on-resistance is 270mOhm when the drain current is 10A and the gate-source voltage is 10V.
The operating junction and storage temperature range is -55°C to 150°C.
The SIHP18N50C-E3 is supplied in a TO-220AB package.
It is mounted using the through-hole method.