SIHP15N60E-GE3 The Vishay Dale SIHP15N60E-GE3 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a continuous drain current of 15A.
Mfr Part #:

SIHP15N60E-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIHP15N60E-GE3 is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source voltage and a continuous drain current of 15A.
✓ Total Stock: 10 pcs
$ Price Range: $0.99

SIHP15N60E-GE3 Available from 1 distributor

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✓ Non-Authorised
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SIHP15N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Material
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHP15N60E-GE3 Description

Short technical summary and product information.

The Vishay Dale SIHP15N60E-GE3 is an N-Channel MOSFET belonging to the E Series Power MOSFET family. It features a low figure-of-merit (FOM) Ron x Qg, low input capacitance, and reduced switching and conduction losses. With a drain-source breakdown voltage of 600V and a continuous drain current rating of 15A at 25°C case temperature, this MOSFET is suitable for various power supply applications.

 

Key electrical characteristics include a maximum Rds On of 280mOhm at 8A and 10V gate drive, a maximum gate charge (Qg) of 78nC at 10V, and an input capacitance (Ciss) of 1350pF at 100V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 180W.

 

Packaged in a TO-220AB through-hole configuration, the SIHP15N60E-GE3 is designed for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits. It is also suitable for industrial applications like welding, induction heating, motor drives, and battery chargers, as well as renewable energy systems including solar PV inverters.

SIHP15N60E-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SIHP15N60E-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIHP15N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHP15N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHP15N60E-GE3 Features

  • 600V drain-source breakdown voltage.
  • 15A continuous drain current.
  • 280mOhm maximum Rds On.
  • Low input capacitance and gate charge.
  • TO-220AB through-hole package.

SIHP15N60E-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications.
  • Renewable energy systems.

SIHP15N60E-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SIHP15N60E-GE3?

The maximum drain-source voltage is 600V.

What is the continuous drain current rating?

The continuous drain current is 15A at a case temperature of 25°C.

What is the Rds On for this MOSFET?

The maximum Rds On is 280mOhm when the gate-source voltage is 10V and the drain current is 8A.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SIHP15N60E-GE3 supplied in?

It is supplied in a TO-220AB package for through-hole mounting.

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