SIHP12N60E-GE3 The Vishay Siliconix SIHP12N60E-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 12A continuous current rating. It comes in a TO-220AB package.
Mfr Part #:

SIHP12N60E-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SIHP12N60E-GE3 is an N-Channel MOSFET with a 600V drain-source voltage and 12A continuous current rating. It comes in a TO-220AB package.
✓ Total Stock: 2,022 pcs
$ Price Range: $0.99

SIHP12N60E-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2 pcs
2 pcs On Request 1 On Request On Request On Request On Request On Request

SIHP12N60E-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIHP12N60E-GE3 Description

Short technical summary and product information.

The Vishay Siliconix SIHP12N60E-GE3 is an N-Channel Power MOSFET designed for various power supply applications. It features a high drain-source voltage rating of 600V and a continuous drain current capability of 12A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 380mOhm at 6A and 10V gate-source voltage, and a gate charge of 58nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a standard TO-220AB package, suitable for through-hole mounting. Its low figure-of-merit (FOM) and reduced switching losses make it suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits.

 

Additional applications include lighting systems like high-intensity discharge (HID) and fluorescent ballast lighting, as well as industrial uses such as welding, induction heating, motor drives, battery chargers, and renewable energy systems like solar PV inverters.

SIHP12N60E-GE3 Quick Information

Product Type: MOSFET
Series: SiHP
Canonical Name: Vishay Siliconix SIHP12N60E-GE3 N-Channel MOSFET
Subcategory: N-Channel

SIHP12N60E-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SIHP12N60E-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIHP12N60E-GE3 Features

  • 600V drain-source breakdown voltage.
  • 12A continuous drain current.
  • 380mOhm maximum on-resistance.
  • 58nC maximum gate charge.
  • TO-220AB through-hole package.

SIHP12N60E-GE3 Applications

  • Server and telecom power supplies.
  • Switch mode power supplies (SMPS).
  • Power factor correction (PFC).
  • Industrial applications.
  • Renewable energy systems.

SIHP12N60E-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SIHP12N60E-GE3?

600V maximum.

What package does the SIHP12N60E-GE3 come in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the continuous drain current rating?

12A at 25°C case temperature.

What is the on-resistance?

380mOhm maximum at 6A drain current and 10V gate drive.

What is the gate threshold voltage?

4V maximum at 250µA drain current.

What is the power dissipation?

147W maximum at 25°C case temperature.

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