| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SIHP12N50C-E3 from Vishay Dale is a single N-Channel Power MOSFET. It is designed with a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 12A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds On) of 555mΩ at 4A and 10V gate-source voltage, and a maximum gate charge (Qg) of 48nC at 10V. The input capacitance (Ciss) is 1375pF at 25V.
This MOSFET has a maximum power dissipation of 208W (Tc) and operates within a temperature range of -55°C to 150°C (TJ). It features a gate-source voltage (Vgs) limit of ±30V and a gate-source threshold voltage (Vgs(th)) of 5V maximum at 250µA.
The SIHP12N50C-E3 is housed in a TO-220-3 package and utilizes Through Hole mounting. It is manufactured using MOSFET (Metal Oxide) technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 500V.
The maximum continuous drain current is 12A.
The maximum power dissipation is 208W.
The operating temperature range is -55°C to 150°C.
It is available in a TO-220-3 package.
The RoHS status is RoHS3 Compliant.