| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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32,020 pcs
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32020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
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The Vishay Dale SIHP100N60E-GE3 is a 600V N-Channel Power MOSFET from the E Series technology. It offers a low figure-of-merit (FOM) Ron x Qg and reduced switching and conduction losses, making it suitable for demanding applications.
Key electrical specifications include a maximum drain-source voltage of 600V, a continuous drain current of 30A at 25°C, and a maximum Rds On of 100mOhm at 13A and 10V gate drive. The gate charge (Qg) is 50nC maximum at 10V.
This MOSFET is rated for a maximum power dissipation of 208W and operates within a temperature range of -55°C to +150°C. It features avalanche energy rating (UIS).
The component is housed in a TO-220AB package and utilizes through-hole mounting. It is RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
The continuous drain current is 30A at 25°C with VGS at 10V.
The Rds On (Max) is 100mOhm at 13A and 10V.
The operating temperature range is -55°C to +150°C (TJ).
It is supplied in a TO-220AB package with through-hole mounting.
The RoHS Status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.