| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,020 pcs
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2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
This Vishay SIHP068N60EF-GE3 is an N-Channel MOSFET from the E Series technology. It offers a drain-source breakdown voltage of 600V and a maximum continuous drain current of 41A at 25°C case temperature.
The MOSFET features a low on-resistance of 68mOhm maximum at 16A and 10V gate-source voltage, and a typical on-resistance of 0.059 Ohm at 25°C. The maximum gate charge is 77nC at 10V.
With a maximum power dissipation of 250W, this component is suitable for applications requiring efficient power switching. It operates within a junction temperature range of -55°C to +150°C.
The device is packaged in a TO-220AB package and is suitable for through-hole mounting. It is RoHS3 compliant and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V minimum at VGS=0V, ID=250µA.
TO-220AB (TO-220-3) through-hole package.
-55°C to 150°C junction temperature.
Yes, it is lead-free per the datasheet.
Yes, it is halogen-free per the datasheet.
41A at 25°C case temperature, 26A at 100°C.
68mOhm maximum at ID=16A, VGS=10V.