| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,020 pcs
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8020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SIHP065N60E-GE3 is a 600V N-Channel MOSFET designed for various power applications. It features a low on-resistance of 65mOhm maximum at 16A and 10V, contributing to reduced conduction losses.
This MOSFET utilizes 4th generation E series technology, offering a low figure-of-merit (FOM) and reduced switching losses. Key electrical characteristics include a maximum continuous drain current of 40A at 25°C case temperature and a gate charge of 74nC maximum.
The device is packaged in a standard TO-220AB package with through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ), making it suitable for demanding industrial environments. Applications include server and telecom power supplies, switch mode power supplies (SMPS), and power factor correction (PFC) circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V minimum at VGS = 0 V, ID = 250 µA.
TO-220-3 (TO-220AB) through-hole package.
-55°C to +150°C junction temperature.
40 A at TC = 25 °C, VGS = 10 V; 25 A at TC = 100 °C.
Maximum 65 mOhm at 16 A, 10 V; typical 57 mOhm at 25 °C.
Maximum 5 V at ID = 250 µA.
226 mJ maximum.